2SC4177W [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | 2SC4177W |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4177W
FEATURES
z
z
z
z
Excellent hFE linearity.
High voltage and current.
Complementary to 2SA1611.
Small package.
Pb
Lead-free
APPLICATIONS
SOT-323
z
Audio frequency general purpose amplifier.
ORDERING INFORMATION
Type No.
Marking
L4▪//L5▪/L6▪/L7▪
Package Code
SOT-323
2SC4177W
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
50
V
5
V
Collector Current -Continuous
Collector Dissipation
100
150
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF039
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4177W
Parameter
Symbol
V(BR)CBO
V(BR)CEO
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown
voltage
IC=100μA,IE=0
60
V
Collector-emitter breakdown
voltage
IC=1mA,IB=0
50
5
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IEBO
hFE
IE=100μA,IC=0
V
VCB=60V,IE=0
0.1 μA
0.1 μA
Emitter cut-off current
DC current gain
VEB=5V,IC=0
VCE=6V,IC=1mA
IC=100mA,IB=10mA
90 200
600
Collector-emitter saturation
voltage
VCE(sat)
0.15 0.3
V
Base-emitter saturation voltage
Transition frequency
IC=100mA,IB=10mA
VCE=6V, IE=-10mA
VCB=6V,IE=0,f=1MHz
VBE(sat)
fT
0.86 1.0
250
V
MHz
pF
Collector output capacitance
Cob
3.0
CLASSIFICATION OF hFE
Range
Marking
90-180
L4
135-270
L5
200-400
L6
300-600
L7
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF039
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4177W
Document number: BL/SSSTF039
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4177W
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
A
Min
1.8
Max
2.2
B
1.15
1.35
C
D
E
1.0Typical
0.15
0.25
1.2
0.35
0.40
1.4
G
H
J
0.02
0.1
0.1Typical
K
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
SOT-323
Shipping
2SC4177W
3000/Tape&Reel
Document number: BL/SSSTF039
Rev.A
www.galaxycn.com
4
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